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How to GaN Webinar Series: Testing GaN to Failure to Create Devices More Robust than Silicon
Join EPC on January 26th, 2021 at 8:00 AM PST to learn how to use…

• A physics-based lifetime model with supporting evidence to project the lifetime of an eGaN device under gate stress over all voltages and temperature ranges.

• A first-principles mathematical model to describe the dynamic RDS(on) effect in eGaN FETs from the basic physics of hot carrier scattering into surface traps. This model is most useful for predicting lifetimes over all voltages and temperatures in more complex mission profiles.

• Field reliability data generated over a period of four years and 226 billion hours of operation, most of which are on vehicles or used in telecommunication base stations.

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